QL78F6SA-L Datasheet - QSI

QL78F6SA-L LASER DIODE

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Fuji-Xerox Model : QL78F6SA-L Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL78F6SA-L AlGaAs Laser Diode Quantum Semiconductor International Co., Ltd. 2007-10-24 OVERVIEW QL78F6SA-L is a MOCVD grown 780nm band AlGaAs laser diode with quantum well structure. It’s an attractive light source, with a typical light.

QL78F6SA-L Features

* - Visible Light Output : λp = 780 nm - Optical Power Output : 8mW CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode

* ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathod, PD anode (Fig. 1) Fig. 1 QL78F6SA-L

* ABSOLUTE MAXIMUM RAT

QL78F6SA-L Datasheet (60.02 KB)