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QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer : Model : QL65J7S-A/B/C
Signature of Approval
Approved by Checked by Issued by
Approval by Customer
315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836
WWW.QSILaser.com
QL65J7S-A/B/C
InGaAlP Laser Diode
Quantum Semiconductor International Co., Ltd.
Ver 0 JAN. 2007
♦OVERVIEW
QL65J7S-A/B/C is a MOCVD grown 650nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 50mW for optoelectronic devices such as DVD R/RW
♦APPLICATION
- DVD R/RW - Optical Module
♦FEATURES
- Visible Light Output : λp = 660 nm(typ.)
- Optical Power Output : 50mW CW
- Package Type
: TO-18 (5.