QL65I7S-B, QL65I7S-A Datasheet (QSI)

QL65I7S-B, QL65I7S-A, LASER DIODE

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL65I7S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL65I7S-A/B/C InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd.

Ver.

3 Jan.

2007 OVERVIEW QL65I7S-A/B/C is a MOCVD grown 650nm band InGaAlP laser diode with quantum well structure.

It's an attractive light source, with a typical

QL65I7S-B Features

* - Visible Light Output : λp = 658 nm(typ.) - Optical Power Output : 30mW CW, 50mW PULSE(Tp = 0.5 - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode , Duty = 50%)

* ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathode, PD anode (Fig. 1) B LD