QL65E7S-B-L Datasheet - QSI

QL65E7S-B-L LASER DIODE

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer :. Model : QL65E7S-A/B/C-L Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL65E7S-A/B/C-L InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd. Ver. 0 Oct. 2004 OVERVIEW QL65E7S-A/B/C-L is a MOCVD grown 650nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typ.

QL65E7S-B-L Features

* - Visible Light Output : λp = 650 nm - Optical Power Output : 7mW CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode

* ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode

QL65E7S-B-L Datasheet (160.44 KB)