V58C2256164SC - 256 Mbit DDR SDRAM

ProMOS Technologies

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Datasheet Details

Part number	V58C2256164SC
Manufacturer	ProMOS Technologies
File Size	1.02 MB
Description	256 Mbit DDR SDRAM
Datasheet	V58C2256164SC_ProMOSTechnologies.pdf

V58C2256164SC Product details

Description

The V58C2256(804/404/164)SC I is a four bank DDR DRAM organized as 4 banks x 8Mbit x 8 (804), 4 banks x 4Mbit x 16 (164), or 4 banks x 16Mbit x 4 (404). I achieves high speed data transfer rates by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock.

Features

High speed data transfer rates with system frequency up to 200 MHz.
Data Mask for Write Control.
Four Banks controlled by BA0 & BA1.
Programmable CAS Latency: 2, 2.5, 3.
Programmable Wrap Sequence: Sequential or Interleave.
Programmable Burst Length: 2, 4, 8 for Sequential Type 2, 4, 8 for Interleave Type.
Automatic and Controlled Precharge Command.
Power Down Mode.
Auto Refresh and Self Refresh.
Refresh Interval: 8192 cycles/64 ms.
Availab.

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Other Datasheets by ProMOS Technologies

V58C2256404SC - 256 Mbit DDR SDRAM
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Published: Oct 21, 2011 |