Datasheet Details
| Part number | PSM8PN06R15 |
|---|---|
| Manufacturer | Prisemi |
| File Size | 456.00 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 PSM8PN06R15-Prisemi.pdf
|
| Part number | PSM8PN06R15 |
|---|---|
| Manufacturer | Prisemi |
| File Size | 456.00 KB |
| Description | N-Channel MOSFET |
| Datasheet |
PSM8PN06R15-Prisemi.pdf
|
The PSM8PN06R15 uses split gate trench technology to provide excellent RDS(ON) low gate charge.This device is suitable for use as a load switch or in PWM applications.MOSFET Product Summary VDS(V) 60 RDS(on)(mΩ) 12@ VGS = 10V 16@ VGS = 4.5V ID(A) 37 Feature Low RDS(ON) - Ensures On-State Losses are Minimized Excellent Qgd x RDS(ON) Product(FOM) Advanced Technology for DC-DC Converts Small Form Factor Thermally Efficient Package Enables Higher Density End Products
📁 PSM8PN06R15 Similar Datasheet