CM200TU-12F Datasheet (Powerex Power Semiconductors)

CM200TU-12F, IGBT Module

Powerex IGBTMOD™ Modules are designed for use in switching applications.

Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode.

All components and interconnects are isolated from the he

CM200TU-12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Six IGBTMOD™ 200 Amperes/600 Volts J S - NUTS (5 TYP) CM N P K K R T (4 TYP.) P GUP EUP GVP EVP GWP EWP L B E N L N L M Q TC MEASURING POINT TC MEASURING POINT GUN EUN GVN EVN GWN EWN U V W J L N D A W - THICK x X - WIDE TAB (12 PLACES) J L N V W - THICK x X - WIDE TAB (12 PLACES) H L C F G P GUP RTC EUP U GUN RTC EUN N EVN GVN RTC EWN EVP V GWN RTC GVP RTC EW

CM200TU-12F Features

* Low Drive Power

* Low VCE(sat)

* Discrete Super-Fast Recovery Free-Wheel Diode

* Isolated Baseplate for Easy Heat Sinking Applications:

* AC Motor Control

* UPS

* Battery Powered Supplies Ordering Information: Example: Select the complete mo