F1010ES, F1010E - Power MOSFET

Name: F1010ES
SKU: F1010ES-617297

Power MOSFET

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F1010ES Datasheet Preview — This datasheet PDF includes multiple part numbers: F1010ES, F1010E. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	F1010ES, F1010E
Manufacturer	Power MOSFET
File Size	161.55 KB
Description	Power MOSFET
Datasheet	F1010E_PowerMOSFET.pdf
Note	This datasheet PDF includes multiple part numbers: F1010ES, F1010E. Please refer to the document for exact specifications by model.

F1010ES Product details

Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

rrent Body Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% [ ISD ].
VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs www. irf. com 7 IRF1010ES/IRF1010EL D2Pak Package Outline www. DataSheet4U. com 1.4 0 (.055 ) M AX. 1 0.54 (.4 15) 1 0.29 (.4 05) -A2 4.69 (.1 85) 4.20 (.1 65) -B 1.3 2 (.05 2) 1.2 2 (.04 8) 1 0.16 (.4 00 ) RE F. 6.

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Published: Jun 16, 2008 |