Datasheet Details
Part number:
F1010ES, F1010E
Manufacturer:
Power MOSFET
File Size:
161.55 KB
Description:
Power mosfet.
Note:
This datasheet PDF includes multiple part numbers: F1010ES, F1010E.
Please refer to the document for exact specifications by model.
F1010ES, F1010E, Power MOSFET
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the des
F1010ES Features
* rrent Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% [ ISD ]
* VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs www.irf.com 7 IRF
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