PMX100N06T Datasheet (Potens semiconductor)

PMX100N06T, N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

PMX100N06T Features

* 60V,100A,RDS(ON)=8mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* Motor Drive

* Power Tools

* LED Lighting S GD S Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM E