PMP09N20M Datasheet (Potens semiconductor)

PMP09N20M, N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

PMP09N20M Features

* 200V,9A, RDS(ON) =0.28Ω@VGS = 10V

* Improved dv/dt capability

* Fast switching

* Green Device Available Applications

* Networking

* Load Switch

* LED applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain