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PJR07N65LB - N-Channel MOSFETS

Potens semiconductor

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Datasheet Details

Part number	PJR07N65LB
Manufacturer	Potens semiconductor
File Size	446.30 KB
Description	N-Channel MOSFETS
Datasheet	PJR07N65LB-Potenssemiconductor.pdf

PJR07N65LB Product details

Description

These N-Channel enhancement mode power field effect transistors are using Super Junction technology.

Features

7A,650V, RDS(ON) =0.57Ω@VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

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Published: Aug 23, 2018 |