PDP6910 Datasheet (Potens semiconductor)

PDP6910, N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

PDP6910 Features

* 60V,24A, RDS(ON) =52mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* Motor Drive

* Power Tools

* LED Lighting GDS S Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID ID