PDN4911S Datasheet (Potens semiconductor)

PDN4911S, P-Channel MOSFETs

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

PDN4911S Features

* -40V,-2.9A, RDS(ON) =68mΩ@VGS = -10V

* Fast switching

* Green Device Available

* Suit for -4.5V Gate Drive Applications Applications

* POL Applications

* Load Switch

* LED Application Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG