PDEW2206 Datasheet (Potens semiconductor)

PDEW2206, Dual N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

PDEW2206 Features

* 20V, 10A, RDS(ON)=9mΩ@VGS=4.5V

* Improved dv/dt capability

* Fast switching

* Green Device Available

* Suit for 1.8V Gate Drive Applications Applications

* Notebook

* Load Switch

* LED applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS