PDEV2220Y Datasheet (Potens semiconductor)

PDEV2220Y, Dual N-Channel MOSFETs

These dual N Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

PDEV2220Y Features

* Fast switching

* Green Device Available

* Suit for 1.5V Gate Drive Applications SOT563 Dual Pin Configuration D1 G2 S2 D1 G1 G2 Applications

* Notebook D2

* Load Switch

* Networking

* Hand-held Instruments S1 G1 D2 S1 S2 Absolute Maximum Ratings Tc=25℃ unless ot