PDEJ2210Z Datasheet (Potens semiconductor)

PDEJ2210Z, N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

PDEJ2210Z Features

* 20V, 7.5A, RDS(ON)=15mΩ@VGS=4.5V

* Improved dv/dt capability

* Fast switching

* Green Device Available

* Suit for 1.8V Gate Drive Applications

* G-S ESD protection diode embedded Applications

* Notebook

* Load Switch

* LED applications Absolute Maximum Ratings