PDD4964 Datasheet (Potens semiconductor)

PDD4964, N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

PDD4964 Features

* 40V, 60A, RDS(ON) =6.7mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* Green Device Available Applications

* MB / VGA / Vcore

* POL Applications

* SMPS 2nd SR

* Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TST