PDD30N15 Datasheet (Potens semiconductor)

PDD30N15, N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

PDD30N15 Features

* 150V,25A, RDS(ON) 65mΩ@VGS = 10V

* VGS Guarantee ± 25V

* Improved dv/dt capability

* Fast switching

* Green Device Available Applications

* Notebook

* Load Switch

* LED applications

* Li battery pack application Absolute Maximum Ratings Tc=25℃ unless otherwise