PDD0956-1 Datasheet (Potens semiconductor)

PDD0956-1, N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

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PDD0956-1 Features

* 100V,12A , RDS(ON)=115mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* 100% PB free and Green Device Available App

* lications

* Networking

* Load Switch

* LED applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Sym