PDC4801R Datasheet (Potens semiconductor)

PDC4801R, N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

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PDC4801R Features

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available D2 Applications

* MB / VGA / Vcore

* POL Buck Applications

* SMPS 2nd SR S2 Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Para