PDC39F2BX Datasheet (Potens semiconductor)

PDC39F2BX, 30V N-Channel MOSFET

These N-Channel enhancement mode power field effect BVDSS RDSON ID transistors are using trench DMOS technology.

This 30V 2.95m 120A advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in th

PDC39F2BX Features

* 30V,120A, RDS(ON) =2.95mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* Networking

* Load Switch

* LED applications D Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol y VDS r VGS a