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PDC3908AX - 30V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 30V,65A, RDS(ON) =7.2mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet Details

Part number PDC3908AX
Manufacturer Potens semiconductor
File Size 563.73 KB
Description 30V N-Channel MOSFET
Datasheet download datasheet PDC3908AX Datasheet

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Full PDF Text Transcription

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30V N-Channel MOSFETs PDC3908AX General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK5x6 Pin Configuration D DDDD SSSG G S BVDSS RDSON ID 30V 7.2m 65A Features ⚫ 30V,65A, RDS(ON) =7.
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