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SP702 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

SP702 Description

polyfet rf devices SP702 General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

SP702 Features

* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 40.0 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25

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Datasheet Details

Part number
SP702
Manufacturer
Polyfet RF Devices
File Size
36.45 KB
Datasheet
SP702_PolyfetRFDevices.pdf
Description
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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Polyfet RF Devices SP702-like datasheet