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SP203 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

SP203 Description

polyfet rf devices SP203 General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

SP203 Features

* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 12.0 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25

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Datasheet Details

Part number
SP203
Manufacturer
Polyfet RF Devices
File Size
34.58 KB
Datasheet
SP203_PolyfetRFDevices.pdf
Description
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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SILICON GATE ENHANCEMENT MODE POWER VDMOS TRANSISTOR Polyfet RF Devices
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