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LX802 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

LX802 Description

polyfet rf devices LX802 General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

LX802 Features

* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 30.0 Watts Single Ended Package Style LX2 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 2

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Datasheet Details

Part number
LX802
Manufacturer
Polyfet RF Devices
File Size
37.69 KB
Datasheet
LX802_PolyfetRFDevices.pdf
Description
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

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SILICON GATE ENHANCEMENT MODE POWER LDMOS TRANSISTOR Polyfet RF Devices
Polyfet RF Devices LX802-like datasheet