LQ801 - SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

Polyfet RF Devices

The LQ801 by Polyfet RF Devices is a SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR. Below is the official datasheet preview.

Datasheet Details

Part number	LQ801
Manufacturer	Polyfet RF Devices
File Size	35.38 KB
Description	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Datasheet	LQ801_PolyfetRFDevices.pdf
Additional preview pages of the LQ801 datasheet.

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM.

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Published: Apr 25, 2005 |