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LP801 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

LP801 Description

polyfet rf devices LP801 General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

LP801 Features

* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 15.0 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25

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Datasheet Details

Part number
LP801
Manufacturer
Polyfet RF Devices
File Size
35.73 KB
Datasheet
LP801_PolyfetRFDevices.pdf
Description
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

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SILICON GATE ENHANCEMENT MODE POWER LDMOS TRANSISTOR Polyfet RF Devices
Polyfet RF Devices LP801-like datasheet