Datasheet Specifications
- Part number
- LP801
- Manufacturer
- Polyfet RF Devices
- File Size
- 35.73 KB
- Datasheet
- LP801_PolyfetRFDevices.pdf
- Description
- SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Description
polyfet rf devices LP801 General .
Features
* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 15.0 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25LP801 Distributors
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