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L225 - SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

L225 Description

polyfet rf devices L225 General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

L225 Features

* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 6.0 Watts Single Ended Package Style SO8 -1 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T =

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Datasheet Details

Part number
L225
Manufacturer
Polyfet RF Devices
File Size
38.33 KB
Datasheet
L225_PolyfetRFDevices.pdf
Description
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

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SILICON GATE ENHANCEMENT MODE POWER LDMOS TRANSISTOR Polyfet RF Devices
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