Datasheet Specifications
- Part number
- F1120
- Manufacturer
- Polyfet RF Devices
- File Size
- 44.68 KB
- Datasheet
- F1120_PolyfetRFDevices.pdf
- Description
- RF POWER VDMOS TRANSISTOR
Description
polyfet rf devices General .
Features
* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance Total Device Dissipation 440 Watts Junction to Case Thermal Resistance 0.4 o C/W Maximum Junction Temperature 200 o C Storage Temperature F1120 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENTF1120 Distributors
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