Datasheet Details
| Part number | PL50N06BGD5 |
|---|---|
| Manufacturer | Plingsemic |
| File Size | 1.19 MB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet |
 PL50N06BGD5-Plingsemic.pdf
|
| Part number | PL50N06BGD5 |
|---|---|
| Manufacturer | Plingsemic |
| File Size | 1.19 MB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet |
PL50N06BGD5-Plingsemic.pdf
|
Split Gate Trench MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON) Applications DC-DC Converters Power management functions Industrial and Motor Drive application Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 60 V Gate-source Voltage VGS ±20 V Drain Current (Silicon limited) Tc=25℃ Tc=100℃ 50 ID A 15 Pulsed Drain Current A
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