MF1011B900Y Datasheet (Philipss) - Microwave power transistor

MF1011B900Y, Microwave power transistor

NPN silicon planar epitaxial microwave power transistor in a SOT448A glued cap metal ceramic flange package, with base connected to flange.

handbook, 4 columns MF1011B900Y QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class C narrowband ampliﬁer.

MODE OF OPERATION C

MF1011B900Y Features

* Suitable for short and medium pulse applications up to 100 µs pulse width, duty factor 10%

* Diffused emitter ballasting resistors improve ruggedness

* Interdigitated emitter-base structure provides high emitter efficiency

* Gold metallization with barrier realizes