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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D187
PMST5550; PMST5551 NPN high-voltage transistors
Product specification Supersedes data of 1997 May 20 1999 Apr 29
Philips Semiconductors
Product specification
NPN high-voltage transistors
FEATURES • Low current (max. 300 mA) • High voltage (max. 160 V). APPLICATIONS • Switching and amplification in high voltage applications such as telephony. DESCRIPTION NPN high-voltage transistor in a SOT323 plastic package. PNP complement: PMST5401. PINNING PIN 1 2 3
PMST5550; PMST5551
DESCRIPTION base emitter collector
handbook, halfpage
3
3 1
MARKING TYPE NUMBER PMST5550 PMST5551 Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 Simplified outline (SOT323) and symbol.