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PMR400UN - N-channel mTrenchMOS ultra low level FET

Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

Features

  • s Surface mounted package s Low on-state resistance s Footprint 63% smaller than SOT23 s Low threshold voltage. 1.3.

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Other Datasheets by Philips Semiconductors (now NXP Semiconductors)

Part Number Description
PMR280UN N-channel mTrenchMOS ultra low level FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMR400UN N-channel µTrenchMOS™ ultra low level FET M3D173 Rev. 01 — 3 March 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Surface mounted package s Low on-state resistance s Footprint 63% smaller than SOT23 s Low threshold voltage. 1.3 Applications s Driver circuits s Switching in portable appliances. 1.4 Quick reference data s VDS ≤ 30 V s Ptot ≤ 0.53 W s ID ≤ 0.8 A s RDSon ≤ 480 mΩ. 2. Pinning information Table 1: Pin 1 2 3 Pinning - SOT416 (SC-75), simplified outline and symbol Description gate (g) source (s) drain (d) g 1 Top view 2 MBK090 MBB076 Simplified outline 3 Symbol d s SOT416 (SC-75) 3.
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