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MZ0912B50Y - NPN microwave power transistor

General Description

NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with base connected to flange.

It is mounted in common base configuration, and specified in class C.

Key Features

  • Interdigitated structure provides high emitter efficiency.
  • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
  • Gold metallization realizes very stable characteristics and excellent lifetime.
  • Multicell geometry gives good balance of dissipated power and low thermal resistance.
  • Input and output matching cell allows an easier design of circuits.

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MZ0912B100Y NPN microwave power transistors

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DISCRETE SEMICONDUCTORS DATA SHEET MZ0912B50Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Input and output matching cell allows an easier design of circuits. APPLICATIONS Common base, class C, broadband, pulse power amplifier from 960 to 1215 MHz for TACAN application.