BLF1820-40 Datasheet (Philips) - UHF power LDMOS transistor

BLF1820-40, UHF power LDMOS transistor

drain gate source, connected to flange 1 Top view 2 3 MBL290 DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT608A flange package with a ceramic cap.

The common source is connected to the mounting flange.

Fig.1 Simplified outline SOT608A.

BLF1820-40 Features

* High power gain

* Easy power control

* Excellent ruggedness

* Designed for broadband operation (1.8 to 2 GHz)

* Internal input and output matching for high gain and efficiency

* Improved linearity at backoff levels. PINNING PIN 1 2 3 APPLICATIONS