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45N03LT - PHP45N03LT

Description

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology.

The device has very low on-state resistance.

It is intended for use in dc to dc converters and general purpose switching applications.

Features

  • ’Trench’ technology.
  • Very low on-state resistance.
  • Fast switching.
  • Stable off-state characteristics.
  • High thermal cycling performance.
  • Low thermal resistance SYMBOL g d s QUICK.

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Datasheet Details

Part number 45N03LT
Manufacturer Philips Semiconductors
File Size 55.18 KB
Description PHP45N03LT
Datasheet download datasheet 45N03LT Datasheet

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Full PDF Text Transcription (Reference)

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Philips Semiconductors TrenchMOS™ transistor Logic level FET Product specification PHP45N03LT FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance SYMBOL g d s QUICK REFERENCE DATA VDSS = 30 V ID = 45 A RDS(ON) ≤ 24 mΩ (VGS = 5 V) RDS(ON) ≤ 21 mΩ (VGS = 10 V) GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP45N03LT is supplied in the SOT78 (TO220AB) conventional leaded package.