Datasheet4U Logo Datasheet4U.com

VTE3373LA - GaAlAs Infrared Emitting Diodes

Description

This narrow beam angle 3 mm diameter plastic packaged emitter is suitable for use in optical switch applications.

It contains a small area, GaAlAs, 880 nm, high efficiency IRED die.

📥 Download Datasheet

Datasheet Details

Part number VTE3373LA
Manufacturer PerkinElmer Optoelectronics
File Size 29.91 KB
Description GaAlAs Infrared Emitting Diodes
Datasheet download datasheet VTE3373LA Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GaAlAs Infrared Emitting Diodes Long T-1 (3 mm) Plastic Package — 880 nm VTE3372LA, 74LA PACKAGE DIMENSIONS inch (mm) DESCRIPTION CASE 50A Long T-1 (3 mm) CHIP SIZE: .011" x .011" This narrow beam angle 3 mm diameter plastic packaged emitter is suitable for use in optical switch applications. It contains a small area, GaAlAs, 880 nm, high efficiency IRED die. ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp. Coefficient of Power Output (Typ.): -40°C to 100°C 100 mW 1.43 mW/°C 50 mA 0.71 mA/°C 2.5 A -.
Published: |