VTE1281-2 - GaAlAs Infrared Emitting Diodes

PerkinElmer Optoelectronics

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Datasheet Details

Part number	VTE1281-2
Manufacturer	PerkinElmer Optoelectronics
File Size	32.20 KB
Description	GaAlAs Infrared Emitting Diodes
Datasheet	VTE1281-2_PerkinElmerOptoelectronics.pdf

VTE1281-2 Product details

Description

CASE 26 T-1¾ (5 mm) CHIP SIZE: .015" x .015" This narrow beam angle 5 mm diameter plastic packaged emitter contains a medium area, single wirebonded, GaAlAs, 880 nm, high efficiency IRED chip.It is designed to be cost effective in moderate pulse drive applications.ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100

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Published: Apr 17, 2005 |