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VTE1163 - GaAlAs Infrared Emitting Diodes

Description

This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher current pulse applications.

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Datasheet Details

Part number VTE1163
Manufacturer PerkinElmer Optoelectronics
File Size 28.18 KB
Description GaAlAs Infrared Emitting Diodes
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GaAlAs Infrared Emitting Diodes TO-46 Lensed Package — 880 nm VTE1163 PACKAGE DIMENSIONS inch (mm) DESCRIPTION CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .018" x .018" This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher current pulse applications. ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp. Coefficient of Power Output (Typ.): -55°C to 125°C 200 mW 2.11 mW/°C 100 mA 1.05 mA/°C 3A -.
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