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(IPD)
MIP289
MOS
I
• • , • IPD • 150 µA , , , IPD
1 2 3 4
6.3±0.2
Unit : mm
+0 0.25 –0.05
MOSFET
CMOS
,
9.4±0.3 8 7 5
.10
7.62±0.25 3.4±0.3 3.80±0.25
2.54±0.25
• • AC •
(∼ 60 W)
0.5±0.1 1.2±0.25 (2,3,7PIN)
I
Ta = 25°C ± 3°C
VD VB VF ID IDP Tch Tstg 700 7 5 280 420 150 −55 ∼ +150 V V V mA mA °C °C
: MIP289
I
1 5
Max Duty Clock
S 4 R
Q 2 (3, 7, 8)
GND
0.6+0.25 –0.10
I
1 : Bypass 2 : Source 3 : Source 0.4±0.1 4 : FB 0.6±0.1 (1,4,5,8PIN) 5 : Drain 7 : Source 8 : Source DIP-8-A1(CF) Package
3 to 15°
1
MIP289 www.DataSheet4U.com
I TC = 25°C ± 2°C
(IPD)
fOSC MAXDC IFB IHYS VFB VCC IS Ich IFBO VUV ILIMIT
* * * *
FB : Open FB : Open
40 65 −85 −18
44 68 −50 −12 1.5 5.8 180 160 2.5 1.5
48 71 −30 −5 1.9 6.
MIP289 Datasheet
