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MA6S718 - Silicon epitaxial planar type

Features

  • I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Peak forward current.
  • Forward current (DC).
  • Junction temperature Storage temperature Note).
  • : Value in per diode Symbol VR VRM IFM IF Tj Tstg Rating 30 30 150 30 125.
  • 55 to +125 Unit V V mA mA °C °C 0.7 ± 0.1 1 : Anode 1 4 : Cathode 3 2 : Anode 2 5 : Cathode 2 3 : Anode 3 6 : Cathode 1 S-Mini Type Package (6-pin) Marking Symbol: M2N Internal Connection 1 2 3 6 5 4 I Electrical Chara.

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Datasheet Details

Part number MA6S718
Manufacturer Panasonic
File Size 38.87 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA6S718 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diodes (SBD) MA6S718 Silicon epitaxial planar type Unit : mm For switching circuits • Small S-mini type 6-pin package • Non connected three elements incorporated in one package, allowing high-density mounting • Flat lead type package, resulting in promotion of the actual mounting ratio and solderability with a high-speed mounter • Optimum for low-voltage rectification because of its low forward rise voltage (VF) • Optimum for high-frequency rectification because of its short reverse recovery time (trr) 2.0 ± 0.1 0.65 0.65 2.1 ± 0.1 1.25 ± 0.
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