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MA3X715 - Silicon epitaxial planar type

Key Features

  • s.
  • Low forward voltage VF.
  • Optimum for high frequency rectification because of its short reverse recovery time trr 1 3 2.8+0.2.
  • 0.3 2 (0.95) (0.95) 1.9±0.1 2.90+0.20.
  • 0.05.
  • Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Maximum peak reverse voltage Forward current Single Double Peak forward current Single Double Tj Tstg IFM Symbol VR VRM IF Rating 30 30 30 20 150 110 125.
  • 55 to +125 °C °C mA Unit V V mA 10˚ 1.1+0.2.
  • 0.1.

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Datasheet Details

Part number MA3X715
Manufacturer Panasonic
File Size 88.61 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA3X715 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diodes (SBD) MA3X715 (MA715) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 1.50+0.25 –0.05 ■ Features • Low forward voltage VF • Optimum for high frequency rectification because of its short reverse recovery time trr 1 3 2.8+0.2 –0.3 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Maximum peak reverse voltage Forward current Single Double Peak forward current Single Double Tj Tstg IFM Symbol VR VRM IF Rating 30 30 30 20 150 110 125 −55 to +125 °C °C mA Unit V V mA 10˚ 1.1+0.2 –0.1 (0.65) 0 to 0.1 1.1+0.3 –0.