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Schottky Barrier Diodes (SBD)
MA2SD24
Silicon epitaxial planar type
Unit: mm
For super high speed switching
0.80+0.05 –0.03
0.80±0.05
0.60+0.05 –0.03 0.12+0.05 –0.02
(0.80)
2 0.30±0.05
5˚
• Forward current (Average) IF(AV) = 200 mA rectification is possible • Small reverse current IR
(0.60)
■ Features
1
(0.60)
0.01±0.01
■ Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Repetitive peak reverse voltage Peak forward current Forward current (Average) Non-repetitive peak forward surge current * Junction temperature Storage temperature Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg Rating 20 20 300 200 1 125 −55 to +125 Unit V
0+0 –0.05
5˚
0.01±0.
MA2SD24 Datasheet
