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MA159A - Silicon epitaxial planar type Switching Diodes

Features

  • s.
  • Two isolated elements contained in one package, allowing highdensity mounting.
  • Short reverse recovery time trr.
  • Small terminal capacitance Ct.
  • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Reverse voltage Maximum peak reverse voltage Forward current Single Double VR VRM IF 80 80 100 75 Peak forward current Single Double IFM 225 170 Non-repetitive peak Single forward surge current.
  • Double IFSM 500 375 Junction temperature Stor.

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Datasheet Details

Part number MA159A
Manufacturer Panasonic
File Size 330.40 KB
Description Silicon epitaxial planar type Switching Diodes
Datasheet download datasheet MA159A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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This product complies with the RoHS Directive (EU 2002/95/EC). Switching Diodes MA4X159A (MA159A) 0Produnntoctu0.1lifea1.1–+00..12cycleen 1.1–+00..13 Silicon epitaxial planar type For switching circuits ■ Features • Two isolated elements contained in one package, allowing highdensity mounting • Short reverse recovery time trr • Small terminal capacitance Ct ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Reverse voltage Maximum peak reverse voltage Forward current Single Double VR VRM IF 80 80 100 75 Peak forward current Single Double IFM 225 170 Non-repetitive peak Single forward surge current * Double IFSM 500 375 Junction temperature Storage temperature Tj 150 Tstg −55 to +150 Note) *: t = 1 s Unit V V mA mA mA °C °C (0.65)stage.dc 0.4±0.
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