K2960 Silicon N-Channel Power F-MOS FET

Panasonic

Description

Power F-MOS FETs 2SK2960 Silicon N-Channel Power F-MOS FET s .

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Datasheet Specifications

Part number: K2960
Manufacturer: Panasonic
File Size: 172.78 KB
Datasheet: K2960_Panasonic.pdf
Description: Silicon N-Channel Power F-MOS FET

Features

* q Avalanche energy capacity guaranteed: EAS > 250mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 55ns q No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 M Di ain sc te on na tin nc ue e/ d q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q C

Applications

* 13.7
* 0.2 +0.5 1.2±0.15 1.45±0.15 0.75±0.1 2.6±0.1 0.7±0.1 s Absolute Maximum Ratings (TC = 25°C) Parameter Symbol Drain to Source breakdown voltage Gate to Source voltage Drain current VDSS VGSS ID IDP DC Pulse Avalanche energy capacity Allowable power dissipation TC = 25°C Ta = 25

K2960 Distributors

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K2960 Silicon N-Channel Power F-MOS FET Panasonic

Panasonic K2960-like datasheet