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DRC9114Y0L - Silicon NPN Transistor

Features

  • s 3.
  • Low collector-emitter saturation voltage Vce(sat).
  • Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 2.
  • Marking Symbol: NC 0.7 (0.5) (0.5).
  • Packaging 1.0 Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Base 2. Emitter 3. Collector.
  • Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Doc No. TT4-EA-11650 Revision. 3 Product Standards Transistors with Built-in Resistor DRC9114Y0L DRC9114Y0L Silicon NPN epitaxial planar type For digital circuits Complementary to DRA9114Y DRC5114Y in SSMini3 type package 1.6 0.26 Unit: mm 0.13 0.85 1.6  Features 3  Low collector-emitter saturation voltage Vce(sat)  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 2  Marking Symbol: NC 0.7 (0.5) (0.5)  Packaging 1.0 Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Base 2. Emitter 3.
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