0.7±0.1
10.0±0.2 5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
4.2±0.2
q Incorporating a zener diode of 30V zener voltage between collector and base
q Minimized variation in the breakdown voltage q Large energy handling capability q High-speed switching q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
14.0±0.5 Solder Dip 4.0
16.7±0.3 7.5±0.2
φ3.1±0.1
1.3±0.2 1.4±0.1
0.8±0.1
0.5 +0.2.
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Power Transistors
2SD1323
Silicon NPN triple diffusion planar type Darlington
For midium speed power switching
s Features
0.7±0.1
10.0±0.2 5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
4.2±0.2
q Incorporating a zener diode of 30V zener voltage between collector and base
q Minimized variation in the breakdown voltage q Large energy handling capability q High-speed switching q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
14.0±0.5 Solder Dip 4.0
16.7±0.3 7.5±0.2
φ3.1±0.1
1.3±0.2 1.4±0.1
0.8±0.1
0.5 +0.2 –0.1
2.54±0.