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C5592 - Silicon NPN Transistor

Features

  • s 1.50.
  • +00..0255 2.8.
  • +00..32.
  • Low collector-emitter saturation voltage VCE(sat) 0.4±0.2.
  • High-speed switching.
  • Mini type package, allowing downsizing of the equipment and 1 2 automatic insertion through the tape packing (0.95) (0.95) 5˚ (0.65) 1.9±0.1 /.
  • Absolute Maximum Ratings Ta = 25°C 2.90+.
  • 00..0250 10˚ e Parameter Symbol Rating Unit c type) Collector-base voltage (Emitter open) VCBO 15 V n d ge. ed Collector-emitte.

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Datasheet Details

Part number C5592
Manufacturer Panasonic
File Size 229.66 KB
Description Silicon NPN Transistor
Datasheet download datasheet C5592 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistors This product complies with the RoHS Directive (EU 2002/95/EC). 2SC5592 Silicon NPN epitaxial planar type For DC-DC converter Unit: mm For various driver circuits 0.40+–00..0150 0.16+–00..0160 3 ■ Features 1.50–+00..0255 2.8–+00..32 • Low collector-emitter saturation voltage VCE(sat) 0.4±0.2 • High-speed switching • Mini type package, allowing downsizing of the equipment and 1 2 automatic insertion through the tape packing (0.95) (0.95) 5˚ (0.65) 1.9±0.1 / ■ Absolute Maximum Ratings Ta = 25°C 2.90+–00..0250 10˚ e Parameter Symbol Rating Unit c type) Collector-base voltage (Emitter open) VCBO 15 V n d ge. ed Collector-emitter voltage (Base open) VCEO 15 0 to 0.1 1.1–+00..12 1.1–+00..
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