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Transistors
2SC3938
Silicon NPN epitaxial planar type
For high-speed switching
Unit: mm
(0.425)
0.3+–00..01
■ Features 3
• Low collector-emitter saturation voltage VCE(sat) • S-Mini type package, allowing downsizing of the equipment and
0.15+–00..0150
1.25±0.10 2.1±0.1 5˚
automatic insertion through the tape packing
1
2
■ Absolute Maximum Ratings Ta = 25°C
(0.65) (0.65)
Parameter
Symbol Rating
Unit
1.3±0.1
/2.0±0.2
Collector-base voltage (Emitter open) VCBO
40
V
10˚
0.2±0.1
e Collector-emitter voltage (E-B short) VCES
40
V
c type) Emitter-base voltage (Collector open) VEBO
5
V
n d ge. ed Collector current
IC
100
mA
0 to 0.1 0.9±0.1 0.9–+00..