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B1252 Power Transistors

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Description

Power Transistors 2SB1252 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1892 10.0±0.2 5.5±0.2 Unit: mm 4.

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Datasheet Specifications

Part number
B1252
Manufacturer
Panasonic
File Size
73.22 KB
Datasheet
B1252-Panasonic.pdf
Description
Power Transistors

Features

* q Optimum for 35W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): < 2.5V q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) 14.0±0.5 Solder Dip 4.0 16.7±0.3 7.5±

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